r e c t r o n semiconductor features ** * * power dissipation p d : 150 mw(tamb=25 o c) forward current i f : 100 ma reverse voltage v r : 80 v operating and storage junction temperature range t j ,t stg : -55 o cto+150 o c mechanical data * case: molded plastic * epoxy: ul 94v-o rate flame retardant * lead: mil-std-202e method 208c guaranteed * mounting position: any * weight: 0.008 gram sot-23 1SS226 2006-3 electrical characteristics ( @ t a = 25 o c unless otherwise noted ) characteristics symbol units - -- - - - - - - 0.5 1.2 34 vv a pf ns reverse breakdown voltage (i r =100 a) reverse voltage leakage current (v r =80v) forward voltage (i f =100ma) diode capacitance (v r =0v,f=1mhz) reverse recovery time v (br) i r v f c d t rr max. - typ. 80 min. technical specification sot-23 switching diode dimensions in inches and (millimeters) 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 3 1 2 maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. 0.047(1.20) 0.055(1.40) downloaded from: http:///
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